Document
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR182
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR182
Marking
Pin Configuration
RGs
1=B
2=E
3=C
Package SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TA TStg
12 20 20 2 35 4 250
150 -65 ... 150 -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
230
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2014-04-07
BFR182
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V, pulse measured
V(BR)CEO 12
-
ICES
--
ICBO
--
IEBO
--
hFE 70 100
max. -
100 100 1 140
Unit
V µA nA µA -
2 2014-04-07
BFR182
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
fT 6 8 Ccb - 0.32 0.5
Unit
GHz pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Ceb - 0.8 -
Minimum noise figure
IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz
NFmin
dB - 0.9 - 1.3 -
Power gain, maximum available1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz
Gma
- 18 - 12 -
Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz
|S21e|2
dB - 15 - 9.5 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
3 2014-04-07
Total power dissipation Ptot = ƒ(TS)
BFR182
Permissible Pulse Load RthJS = ƒ(tp)
Ptot RthJS
300 mW
200
150
100
50
00 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp)
10 2
10 3 K/W
10 2
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Ptotmax/PtotDC
-
D=0
0.