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BFR182 Dataheets PDF



Part Number BFR182
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFR182 DatasheetBFR182 Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR182 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR182 Marking Pin Configuration RGs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol .

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR182 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR182 Marking Pin Configuration RGs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg 12 20 20 2 35 4 250 150 -65 ... 150 -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 230 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-07 BFR182 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - ICES -- ICBO -- IEBO -- hFE 70 100 max. - 100 100 1 140 Unit V µA nA µA - 2 2014-04-07 BFR182 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded fT 6 8 Ccb - 0.32 0.5 Unit GHz pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.8 - Minimum noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz NFmin dB - 0.9 - 1.3 - Power gain, maximum available1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Gma - 18 - 12 - Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz |S21e|2 dB - 15 - 9.5 - 1Gma = |S21e / S12e| (k-(k²-1)1/2) 3 2014-04-07 Total power dissipation Ptot = ƒ(TS) BFR182 Permissible Pulse Load RthJS = ƒ(tp) Ptot RthJS 300 mW 200 150 100 50 00 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 2 10 3 K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Ptotmax/PtotDC - D=0 0.


BFR182 BFR182 BFR182T


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