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BFR182TW Dataheets PDF



Part Number BFR182TW
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Datasheet BFR182TW DatasheetBFR182TW Datasheet (PDF)

BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter A.

  BFR182TW   BFR182TW



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BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 15 10 2 35 5 200 150 –65 to +150 Unit V V V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85025 Rev. 2, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (4) BFR182T/BFR182TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 15 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 30 mA, IB = 3 mA VCE = 6 V, IC = 5 mA VCE = 8 V, IC = 20 mA Symbol Min ICES ICBO IEBO V(BR)CEO 10 VCEsat hFE 50 hFE Typ Max Unit 100 mA 100 nA 1 mA V 0.4 V 0.1 90 100 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 6 V, IC = 5 mA, f = 500 MHz VCE = 8 V, IC = 20 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 900 MHz VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 1.75 GHz Power gain VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 900 MHz VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 1.75 GHz Transducer gain VCE = 8 V, IC = 20 mA, f = 900 MHz, Z0 = 50 W Symbol fT fT Ccb Cce Ceb F F Gpe Gpe S21e2 Min Typ 5.5 7.5 0.3 0.2 0.65 1.5 2.0 15 11 14 Max Unit GHz GHz pF pF pF dB dB dB dB dB www.vishay.de • FaxBack +1-408-970-5600 2 (4) Document Number 85025 Rev. 2, 20-Jan-99 BFR182T/BFR182TW Vishay Telefunken Dimensions of BFR182T in mm 95 11346 Dimensions of BFR182TW in mm 96 12236 Document Number 85025 Rev. 2, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (4) BFR182T/BFR182TW Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international .


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