Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 1 mA ...
Low Noise Silicon Bipolar RF
Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
BFR182W
32 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR182W
Marking
Pin Configuration
RGs
1=B
2=E
3=C
Package SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 90 °C Junction temperature Ambient temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TA
12 20 20 2 35 4 250
150 -65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
240
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2014-04-07
BFR182W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 Collector-emitter cutoff current
VCE = 4 V, VBE = 0 VCE = 15 V, VBE = 0 V, TA = 85 °C (verified by random sampling)
V(BR)CEO...
