AQY410EH

Normally closed type with reinforced insulation (AQY410EH, 414EH) (AQY412EH) GE 1 Form B (AQY41❍EH) 4.78 .188 6.4 .252 3.2 .126 4.78 .188 (Height includes standoff) 6.4 .252 2.9 .114 mm inch 14 23 RoHS compliant FEATURES 1. 1 Form B output type 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N– N+ Drain electrode 3. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 5. High sensitivity and low onresis...