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BFR193W Dataheets PDF



Part Number BFR193W
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFR193W DatasheetBFR193W Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193W Marking Pin Configuration RCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol .

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193W Marking Pin Configuration RCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 63°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 80 10 580 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 150 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit K/W 1 2014-04-07 BFR193W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - ICES -- ICBO -- IEBO -- hFE 70 100 max. - 100 100 1 140 Unit V µA nA µA - 2 2014-04-07 BFR193W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded fT 6 8 Ccb - 0.74 1 Unit GHz pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.28 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 1.8 - Minimum noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz NFmin dB -1- 1.6 - Power gain, maximum available1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz Gma - 16 - 10.5 - Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω, f = 900 MHz f = 1.8 GHz |S21e|2 dB - 13.5 -8- Third order intercept point at output2) IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IP3 - 30 - dBm 1dB Compression point IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz P-1dB - 13 - 1Gma = |S21 / S12| (k-(k²-1)1/2) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz 3 2014-04-07 Total power dissipation Ptot = ƒ(TS) Ptot 600 mW 500 450 400 350 300 250 200 150 100 50 00 20 40 60 80 100 120 °C 150 TS BFR193W 4 2014-04-07 Package SOT323 BFR193W 5 2014-04-07 BFR193W Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2014-04-07 .


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