AQV453A

AQV45, AQV454H 8.8 .346 6.4 .252 3.9 .154 8.8 .346 Height includes standoff CCAAD DDaattaa 6.4 .252 3.6 .142 mm inch 16 25 34 HE 1 Form B (AQV45, AQV454H)(Standard type) (Standard type) Normally closed DIP6-pin type Low on-resistance with 250V/400V load voltage HE 1 Form B (AQV45, AQV454H) FEATURES 1. 1 Form B (Normally-closed) type with low on-resistance This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane NN+ Drain electrode 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity and low onresistance Can control max. 0.2 A load current with 5 mA input cu...