Photo MOS Relay
AQV45, AQV454H
8.8 .346
6.4 .252
3.9 .154
8.8 .346
Height includes standoff
CCAAD DDaattaa
6.4 .252
3.6 .142
mm i...
Description
AQV45, AQV454H
8.8 .346
6.4 .252
3.9 .154
8.8 .346
Height includes standoff
CCAAD DDaattaa
6.4 .252
3.6 .142
mm inch
16
25 34
HE 1 Form B (AQV45, AQV454H)(Standard type)
(Standard type)
Normally closed DIP6-pin type
Low on-resistance with 250V/400V load voltage
HE 1 Form B
(AQV45, AQV454H)
FEATURES
1. 1 Form B (Normally-closed) type with low on-resistance This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
NN+
Drain electrode
2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
3. High sensitivity and low onresistance Can control max. 0.2 A load current with 5 mA input cu...
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