AQV414EH

Normally closed type with reinforced insulation (AQV410EH, 414EH) (AQV412EH) GE 1 Form B (AQV41❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 16 25 34 RoHS compliant FEATURES 1. 1 Form B output type 2. 60V type couples high capacity (0.55A) with low on-resistance (Typ. 1Ω). 3. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N– N+ Drain electrode 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 5. High sensitivity and low onresistance Can control max. 0.55 A load current with 5 mA input current. Low on-resistance of...