BFR280

BFR280 NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile 3 communications systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz F = 1.5 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR280 Maximum Ratings Parameter Marking REs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT23 Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS
116 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance 8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ... 150 V mA mW °C Junction - soldering point2) RthJS
425 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-27-2001 BFR280 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFR280 Electrical Characteristics at TA = 25°C, u...