MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N–Channel
2 SOURCE 3 GATE
BF...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N–Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
2
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate – Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage (VGS = 10 Vdc, VDS = 0) (ID = 0.5 nAdc, VDS = 10 Vdc) (ID = 1.0 mAdc, VDS = 10 Vdc) (ID = 50 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 IGSS VGS(OFF) VGS — — — – 0.7 — — — 0.2 5.0 2.5 – 3.0 – 1.3 – 4.0 – 2.0 nAdc Vdc Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Berquist Company.
Motorola
Transistors, FETs and Diodes Device Data © Motorola, Small–Signal Inc. 1996
1
BFR30LT1 BFR31LT1
ELECTRICAL CHARACTER...