BFR340F

Low Noise Silicon Bipolar RF Transistor General purpose Low Noise Amplifier Ideal for low current operation High breakdown voltage enables operation in automotive applications Minimum noise figure 1.0 dB @ 1mA,1.5 V,1.9 GHz Pb-free (RoHS compliant) and halogen-free thin small flat package (1.2 x 1.2 mm2 ) with visible leads Qualification report according to AEC-Q101 available BFR340F 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR340F Marking Pin Configuration FAs 1=B 2=E 3=C Package TSFP-3 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 110°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 6 15 15 2 20 2 75 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 530 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2013-11-06 BFR340F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 4 V, VBE = 0, TA = 25°C VCE =...