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IS41LV44004

Integrated Silicon Solution

4M x 4 (16-MBIT) DYNAMIC RAM

IS41C4400X IS41LV4400X SERIES 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE ISSI® www.DataSheet4U.com JUNE, 2001 FEA...


Integrated Silicon Solution

IS41LV44004

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Description
IS41C4400X IS41LV4400X SERIES 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE ISSI® www.DataSheet4U.com JUNE, 2001 FEATURES Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: – 2,048 cycles/32 ms – 4,096 cycles/64 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: – 5V±10% or 3.3V ± 10% Byte Write and Byte Read operation via two CAS Industrial temperature range -40°C to 85°C DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the 4400 Series ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The 4400 Series is packa...




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