BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For...
BFR360F
NPN Silicon RF
Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR360F
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 98°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2)
Marking FBs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150 Value
Package TSFP-3
Unit V
mA mW °C
Unit K/W
250
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jun-16-2003
BFR360F
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 15 mA, VCE = 3 V hFE 60 130 200 IEBO 1 µA ICBO 100 nA ICES 10 µA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit
2
Jun-16-2003
BFR360F
Electrical Characteristics at TA = 25°C, un...
