Low Noise Silicon Bipolar RF Transistor
• Low voltage/ Low current operation • For low noise amplifiers • For Oscillator...
Low Noise Silicon Bipolar RF
Transistor
Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small
leadless package Qualification report according to AEC-Q101 available
BFR360L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR360L3
Marking
Pin Configuration
FB
1=B
2=E
3=C
Package TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 104°C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
6 15 15 2 35 4 210
150 -55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
220
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2013-09-03
BFR360L3
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC c...
