BFR460L3

Low Noise Silicon Bipolar RF Transistor For low voltage / low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: 1.1 dB at 1.8 GHz Excellent ESD performance typical value 1500V (HBM) High fT of 22 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 available BFR460L3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR460L3 Marking Pin Configuration AB 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 108°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the collector lead at the soldering point to the pcb Value 4.5 4.2 15 15 1.5 50 5 200 150 -55 ... 150 Unit V mA mW °C 1 2013-09-13 BFR460L3 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current ...