DISCRETE SEMICONDUCTORS
DATA SHEET
BFR520 NPN 9 GHz wideband transistor
Product specification File under Discrete Semic...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR520
NPN 9 GHz wideband
transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband
transistor
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION PIN The BFR520 is an
npn silicon planar epitaxial
transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless 1 2 3 base emitter collector DESCRIPTION Code: N28 telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The
transistor is encapsulated in a plastic SOT23 envelope. PINNING
1 Top view
fpage
BFR520
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 97 °C; note 1 IC = 20 mA; VCE = 6 V IC = ic = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz S212 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs =...