DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T NPN 9 GHz wideband transistor
Preliminary specification 1999 Oct 18...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T
NPN 9 GHz wideband
transistor
Preliminary specification 1999 Oct 18
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband
transistor
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT416 (SC75) envelope. DESCRIPTION
NPN transistor in a plastic SOT416 (SC75) envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.
handbook, halfpage
BFR520T
PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2
3
1
2
MAM337
Fig.1 SOT416.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 °C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 °C IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. − − − − 60 − − − TYP. − − − − 120 9 15 1.1 MAX. 20 15 70 300 250 − − 1.6 GHz dB dB UNIT V V mA mW
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage co...