BFR53

DISCRETE SEMICONDUCTORS DATA SHEET BFR53 NPN 2 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 28 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES Very low intermodulation distortion Very high power gain. APPLICATIONS Thick and thin-film circuits. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation feedback capacitance transition frequency open emitter open base f > 1 MHz Ts ≤ 85 °C IC = 2 mA; VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C CONDITIONS − − − − 0.9 2 10.5 TYP. PINNING PIN 1 2 3 base emitter collector 1 Top view Marking code: N1. BFR53 DESCRIPTION fpage 3 2 MSB003 Fig.1 SOT23. MAX. 18 10 100 250 − − − V V UNIT mA mW pF GHz dB maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature f > 1 MHz Ts ≤ 85 °C (note 1) open em...