BFR540

SOT23 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability. 1.3 Applications  RF front end wideband applications in the GHz range  Analog and digital cellular telephones  Cordless telephones (CT1, CT2, DECT, etc.)  Radar detectors  Satellite TV tuners (SATV)  MATV/CATV amplifiers  Repeater amplifiers in fiber-optic systems. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO VCES collector-base voltage collector-emitter voltage open emitter RBE = 0  - - 20 V - - 15 V IC collector current (DC) - - 120 mA Ptot total power dissipation Tsp  70 C [1] - - 500 mW hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 Cre feedback capacitance IC = ic = 0 A; VCB = 8 V; - 0.6 - pF f = 1 MHz fT transition frequency IC = 40 mA; VCE = 8 V; - 9 - GHz f = 1 GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; Tamb = 25 C f = 900 MHz - 14 - dB f = 2 GHz - 7 - dB NXP Semiconductors BFR540 NPN 9 GHz wideband transistor Table 1. Symbol s212 NF Quick reference data …continued Parameter Conditions insertion power gain IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900...