BFR92

DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PNP complement is BFT92. PINNING PIN 1 2 3 DESCRIPTION Code: P1p base emitter collector 1 Top view fpage BFR92 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Cre GUM F Vo PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure output voltage up to Ts = 95 °C; note 1 IC = 14 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C IC = 2 mA; VCE = 10 V; f = 1 MHz IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt. dim = −60 dB; IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 493.25 MHz open base CONDITIONS open emitter TYP. − − − − 5 0.4 18 2.4 150 MAX. 20 15 25 300 − − − − − UNIT V V mA mW GHz pF dB dB mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1....