BFR92A

NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR92A FEATURES High power gain Low noise figure Low intermodulation distortion. APPLICATIONS RF wideband amplifiers and oscillators. DESCRIPTION NPN wideband transistor in a plastic page 3 SOT23 package. PNP complement: BFT92. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Top view 2 MSB003 Marking code: P2%. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot Cre fT GUM collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain F noise figure VO output voltage CONDITIONS Ts ≤ 95 °C IC = ic = 0; VCE = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt; Tamb = 25 °C dim = −60 dB; IC = 14 mA; VCE = 10 V; RL = 75 Ω; fp + fq − fr = 793.25 MHz TYP. − − − − 0.35 5 14 8 2.1 150 MAX. 20 15 25 300 − − − UNIT V V mA mW pF GHz dB − dB − dB − mV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector Ts ≤ 95 °C; note 1; see F...