NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92A
FEATURES • High power gain • Low noise fi...
NXP Semiconductors
NPN 5 GHz wideband
transistor
Product specification
BFR92A
FEATURES High power gain Low noise figure Low intermodulation distortion.
APPLICATIONS RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband
transistor in a plastic page
3
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1 Top view
2
MSB003
Marking code: P2%.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO VCEO IC Ptot Cre fT GUM
collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain
F
noise figure
VO
output voltage
CONDITIONS
Ts ≤ 95 °C IC = ic = 0; VCE = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt; Tamb = 25 °C dim = −60 dB; IC = 14 mA; VCE = 10 V; RL = 75 Ω; fp + fq − fr = 793.25 MHz
TYP. − − − − 0.35 5 14
8
2.1
150
MAX.
20 15 25 300 − − −
UNIT V V mA mW pF GHz dB
−
dB
−
dB
−
mV
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO VCEO VEBO IC Ptot Tstg Tj
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature
CONDITIONS open emitter open base open collector
Ts ≤ 95 °C; note 1; see F...