Low Noise Silicon Bipolar RF Transistor
• For broadband amplifiers up to 2 GHz and fast non-saturated switches at collec...
Low Noise Silicon Bipolar RF
Transistor
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available
BFR92P
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR92P
Marking
Pin Configuration
GFs 1=B 2=E 3=C
Package SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
15 20 20 2.5 45 4 280
150 -55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
205
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2013-11-21
BFR92P
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V, pulse measured
V(BR)CEO 15
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ICES
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ICB...