Semiconductor
Data Sheet
BUZ21
October 1998 File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power
Features
MOSFE...
Semiconductor
Data Sheet
BUZ21
October 1998 File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ21)
This is an N-Channel enhancement mode silicon gate power field effect
transistor designed for applications such as
/Subject switching
regulators, switching converters, motor drivers,
(19A, relay drivers, and drivers for high power bipolar switching
19A, 100V rDS(ON) = 0.100Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds
100V,
transistors requiring high speed and low gate drive power. 0.100 This type can be operated directly from integrated circuits. Ohm, N- Formerly developmental type TA9854. Channel Power Ordering Information
Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature
MOSFET)
PART NUMBER
PACKAGE
BUZ21
TO-220AB
BRAND BUZ21
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
/Author NOTE: When ordering, use t...