BFR93ALT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BFR93ALT1/D The RF Line NPN Silicon High-Frequency Transistors Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel. BFR93ALT1 RF TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (2) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 12 15 2.0 35 150 0.306 4.08 Unit Vdc Vdc Vdc mAdc °C W mW/°C THERMAL CHARACTERISTICS Characteristic Storage Temperature Thermal Resistance Junction to Case Symbol Tstg RθJC Max – 55 to +150 245 Unit °C °C/W CASE 318–08, STYLE 6 SOT–23 LOW PROFILE DEVICE MARKING BFR93ALT1 = R2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (IC = 10 mA) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IC = 100 µA) Collector Cutoff Current (VCE = 10 V) Collector Cutoff Current (VCB = 10 V) V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO 12 15 2.0 — — — — — 50 50 Vdc Vdc Vdc nA nA ON CHARACTERISTICS DC Current Gain (1) (IC = 30 mA, VCE = 5.0 V) Collector–Emitter Saturation Voltage (1) (IC = 35 mA,...