BFR93AT

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR93AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 09 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES High power gain Gold metallization ensures excellent reliability SOT416 (SC-75) package. APPLICATIONS Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT uses the same die as the SOT23 version: BFR93A. PINNING PIN 1 2 3 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 75 °C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz f = 2 GHz F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt − − − − 13 8 1.5 − open base CONDITIONS open emitter MIN. − − − − 40 − 4 TYP. − − − − 90 0.6 5 base emitter collector DESCRIPTION Marking code: R2. fpage BFR93AT 3 1 Top view 2 MBK090 Fig.1 SOT416. MAX. 15 12 35 150 − − − − − − 150 UNIT V V mA mW pF GHz dB dB dB °C 2000 Mar 09 2 Philips Semiconductors ...