BFR949F
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector current...
BFR949F
NPN Silicon RF
Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
3 1
2
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949F
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 93°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2)
Marking RKs
Pin Configuration 1=B 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS
3=C
Package TSFP-3
Unit V
Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150
mA mW °C
Value
225
Unit K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jan-04-2002
BFR949F
Electrical Characteristics Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 , VBE = 0 V Collector -base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 10 V Symbol min. Values typ. max. Unit
2
Jan-04-2002
BFR949F
Electrical Characteristics Parameter AC Characteristics Transition frequency IC = 15 mA, VCE = 6 V, f =...
