BFR949L3

BFR949L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz F = 1.0 dB at 1 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949L3 Maximum Ratings Parameter Marking RK 1=B Pin Configuration 2=E 3=C Package TSLP-3-1 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS
100°C 1) Junction temperature Ambient temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 2) RthJS
tbd K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-09-2001 BFR949L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 10 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFR949L3 Electrical Characteristics at TA = 25°C, unless otherwise specified. Param...