BFR96

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 100ºC Derate above 100ºC 500 10 mWatts mW/ ºC MSC1309.PDF 10-25-99 BFR96 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, VBE = 0 Vdc) 15 20 3.0 Value Typ. Max. 100 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) 30 200 - DYNAMIC Symbol Ftau CCB Test Conditions Min. Current-Gain – Bandwidth Product (IC = 50 mA, VCE = 10 Vdc, f = 0.5 GHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Value Typ. 5.0 2.6 Max. 3.2 Unit GHz pF MSC13...