BFR96T

BFR96T Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR96T Marking: BFR96T Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2.5 75 500 175 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 230 Unit K/W Document Number 85036 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (10) BFR96T Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 5 mA, IB = 0 VCE = 10 V, IC = 50 mA VCE = 10 V, IC = 75 mA Symbol Min Typ Max Unit ICES 100 mA ICBO ...