BFS 17P
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-t...
BFS 17P
NPN Silicon RF
Transistor
For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA CECC-type available: CECC 50002/248.
Type BFS 17P
Marking Ordering Code MCs Q62702-F940
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings of any single
Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 25 2.5 25 50 mA Unit V
VCEO VCBO VEBO IC ICM Ptot
f ≥ 10 MHz
Total power dissipation
mW 280 150 - 65 + 150 - 65 ... + 150 ≤ 340 °C
TS ≤ 55 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
1)
Tj TA Tstg RthJS
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
1
Aug-02-1996
BFS 17P
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics of any single
Transistor Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 70 0.1 -
V µA 0.05 10 100 20 20 150 V 0.4
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO
VCB = 10 V, IE = 0 VCB = 25 V, IE = 0
Emitter-base cutoff current
IEBO
-
VEB = 2.5 V, IC = 0
DC current gain
hFE
IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V
Collector-emitter saturation voltage
VCEsat
IC = 10 mA, IB = 1 mA
Semiconductor Group
2
Aug-02-1996
BFS 17P
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characterist...