BFS17W

BFS 17W NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type BFS 17W Marking Ordering Code MCs Q62702-F1645 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 25 2.5 25 50 mA Unit V VCEO VCBO VEBO IC ICM Ptot f ≥ 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 ... + 150 ≤ 205 °C TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Tj TA Tstg RthJS K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Nov-28-1996 BFS 17W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics of any single Transistor Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 70 0.1 - V µA 0.05 10 100 20 20 150 V 0.4 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current IEBO - VEB = 2.5 V, IC = 0 DC current gain hFE IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V Collector-emitter saturation voltage VCEsat IC = 10 mA, IB = 1 mA Semiconductor Group 2 Nov-28-1996 BFS 17W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics of any single Transistor Transiti...