BFS17W

BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFS17 Marking: E1 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFS17R Marking: E4 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 13 570 2 3 BFS17W Marking: WE1 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Document Number 85038 Rev. 4, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 200 150 –55 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W www.vishay.de FaxBack +1-408-970-5600 2 (10) Document Number 85038 Rev. 4, 20-Jan-99 BFS17/BFS17R/BFS17W Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-...