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RB520L-30

GME

Schottky Barrier Diode

Schottky Barrier Diode FEATURES  Low IR=0.1μA.  High reliability.  Small surface mounting. Pb Lead-free Production ...


GME

RB520L-30

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Description
Schottky Barrier Diode FEATURES  Low IR=0.1μA.  High reliability.  Small surface mounting. Pb Lead-free Production specification RB520L-30 APPLICATIONS  Low current rectification. ORDERING INFORMATION Type No. Marking RB520L-30 B DFN1006-2 Package Code DFN1006-2 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC reverse voltage Mean rectifying current Peak forward surge current Total device dissipation Junction temperature storage temperature VR 30 IO 200 IFSM 1 PT 200 Tj +125 Tstg -40 to +125 Unit V mA A mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage Reverse current VF IR 0.6 V IF=200mA 1 μA VR=10V 016 Rev.A www.gmesemi.com 1 Production specification Schottky Barrier Diode RB520L-30 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified 016 Rev.A www.gmesemi.com 2 DB Schottky Barrier Diode PACKAGE OUTLIN...




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