Schottky Barrier Diode
FEATURES
High reliability. Low voltage; Low inductance. Low VF.
APPLICATIONS
Low current ...
Schottky Barrier Diode
FEATURES
High reliability. Low voltage; Low inductance. Low VF.
APPLICATIONS
Low current rectification.
Pb
Lead-free
Production specification
RB751L-40
ORDERING INFORMATION
Type No.
Marking
RB751L-40
5
DFN1006-2
Package Code DFN1006-2
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Peak reverse voltage
VRM
45
DC reverse voltage
VR 40
Mean rectifying current IO 30
Peak forward surge current
IFSM
200
Junction temperature
Tj 125
Storage temperature
Tstg -40 to +125
Unit V V mA mA ℃ ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Forward voltage Reverse current Capacitance between terminals
Symbol Min. Typ. Max. VF 0.37 IR 0.5 CT 2
Unit V μA pF
Conditions IF=1mA VR=30v VR=1V,f=1MHz
Q008 Rev.A
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Production specification
Schottky Barrier Diode
RB751L-40
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
DB C
H
PACKAGE OUTLINE
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