BFS20

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFS20 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 08 1999 Apr 15 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES Low current (max. 25 mA) Low voltage (max. 20 V) Very low feedback capacitance (typ. 350 fF). APPLICATIONS IF and VHF applications in thick and thin-film circuits. handbook, halfpage BFS20 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BFS20 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. MAX. 30 20 4 25 25 250 +150 150 +150 MARKING CODE(1) G1∗ Top view 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. UNIT V V V mA mA mW °C °C °C 1999 Apr 15 2 Philips Semiconductors Product specification NPN medium frequency transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR...