BFS20W

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS20W NPN medium frequency transistor Product specification 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES Low current (max. 25 mA) Low voltage (max. 20 V). Very low feedback capacitance (typ. 350 fF). APPLICATIONS IF and VHF applications in thick and thin-film circuits. handbook, halfpage BFS20W PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 DESCRIPTION 3 NPN medium frequency transistor in a SOT323 (SC-70) plastic package. MARKING 1 2 1 2 TYPE NUMBER BFS20W Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) N1∗ Fig.1 Top view MAM062 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323 (SC-70) standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 30 20 4 25 25 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 21 2 Philips Semiconductors Product specification NPN medium frequency transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Re...