DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BFS20W NPN medium frequency transistor
Product specification ...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BFS20W
NPN medium frequency
transistor
Product specification 1999 Apr 21
Philips Semiconductors
Product specification
NPN medium frequency
transistor
FEATURES Low current (max. 25 mA) Low voltage (max. 20 V). Very low feedback capacitance (typ. 350 fF). APPLICATIONS IF and VHF applications in thick and thin-film circuits.
handbook, halfpage
BFS20W
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
DESCRIPTION
3
NPN medium frequency
transistor in a SOT323 (SC-70) plastic package. MARKING
1 2
1 2
TYPE NUMBER BFS20W Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia.
MARKING CODE(1) N1∗ Fig.1
Top view
MAM062
Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323 (SC-70) standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 30 20 4 25 25 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 21
2
Philips Semiconductors
Product specification
NPN medium frequency
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Re...