BFS25A

DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFS25A FEATURES  Low current consumption  Low noise figure  Gold metallization ensures excellent reliability  SOT323 envelope. PINNING PIN DESCRIPTION Code: N6 1 base 2 emitter 3 collector DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. handbook, 2 columns 3 1 Top view 2 MBC870 Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE fT collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency GUM maximum unilateral power gain F noise figure CONDITIONS open emitter open base up to Ts = 170 C; note 1 IC = 0.5 mA; VCE = 1 V; Tj = 25 C IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C MIN.     50 3.5   TYP.     80 5 13 1.8 MAX. 8 5 6.5 32 200    UNIT V V mA mW GHz dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature CONDIT...