1SS367

1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features PIN Low forward voltage: VF = 0.23V (typ.) @IF = 5mA 1 2 1 DESCRIPTION Cathode Anode 2 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 200 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ? ? ? Characteristics at T j = 25 ? Parameter Forward Voltage Reverse Current Total Capacitance Test Conditions IF = 1mA IF = 5mA IF = 100mA VR = 10V f = 1MHZ Symbol VF VF VF IR CT Min - Typ 0.18 0.23 0.35 20 Max - 0.30 0.50 20 40 Unit V V V µA pF РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@...