SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
1SS367
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
High Speed Switching Applicatio
PINNING
Features
PIN
• Low forwar...
Description
1SS367
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
High Speed Switching Applicatio
PINNING
Features
PIN
Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
1 2
1
DESCRIPTION Cathode Anode
2
S3
Top View
Marking Code: "S3"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T j = 25? )
Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range
Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr
Value 15 10 200 100 1 200 125
-55 to +125 -40 to +100
Unit V V mA mA A
mW ? ? ?
Characteristics at T j = 25 ?
Parameter Forward Voltage
Reverse Current Total Capacitance
Test Conditions IF = 1mA IF = 5mA IF = 100mA VR = 10V f = 1MHZ
Symbol VF VF VF IR CT
Min -
Typ 0.18 0.23 0.35
20
Max -
0.30 0.50 20 40
Unit V V V µA pF
РАДИОТЕХ
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