BFS460L6

BFS460L6 NPN Silicon RF TWIN Transistor High fT of 22 GHz For low voltage / low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: 1.1 dB at 1.8 GHz World's smallest SMD 6-pin leadless package Excellent ESD performance Built in 2 transistors (TR1, TR2: die as BFR460L3) * Short-term description 4 5 6 1 2 3 6 T R 1 5 T R 2 4 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS460L6 Maximum Ratings Parameter Marking Pin Configuration Package AB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO 4.5 4.2 VCES VCBO VEBO IC IB Ptot Tj TA T stg 15 15 1.5 50 5 200 150 -65 ... 150 -65 ... 150 mW °C mA Value Unit V Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 104°C Junction temperature Ambient temperature Storage temperature 1T is measured on the collector lead at the soldering point to the pcb S 1 Jun-15-2004 BFS460L6 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 230 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, V...