1SS352

Silicon Epitaxial Planar Diode FEATURES z Small package z Low forward voltage z Fast reverse recovery time z Small total capacitance Pb Lead-free Production specification 1SS352 APPLICATIONS z High speed switching ORDERING INFORMATION Type No. Marking 1SS352 C1 SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage DC Reverse Voltage Average Rectified Output Current Surge current(10ms) Power Dissipation Junction temperature Storage temperature VRM VR IO IFSM PD Tj TSTG 85 80 100 1 200 125 -55 to +125 Unit V V mA A mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified B053 Rev.A www.gmicroelec.com 1 Silicon Epitaxial Planar Diode Parameter Forward voltage Reverse current Total Capacitance Reverse recovery time Symbol VF IR CT trr Conditions IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0,f=1MHz IF=10mA Production specification 1SS352 Min. - Typ. 0.62 0.75 0.98 - 0.5 Max...