Silicon Epitaxial Planar Switching Diode
1SS352
Silicon Epitaxial Planar Switching Diode
Features • Low forward voltage • Fast Reverse Recovery Time • Small Tota...
Description
1SS352
Silicon Epitaxial Planar Switching Diode
Features Low forward voltage Fast Reverse Recovery Time Small Total Capacitance
Application Ultra high speed switching
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
W2
Top View Marking Code: "W2" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum (Peak) Reverse Voltage Reverse Voltage Average Rectified Forward Current
HMaximum (Peak) Forward Current
Surge Forward Current (10 ms)
CPower Dissipation
Junction Temperature
EStorage Temperature Range TCharacteristics at Ta = 25 OC
Parameter
MForward Voltage
at IF = 100 mA
EReverse Current
at VR = 30 V
Sat VR= 80 V
Symbol
VRM VR IF(AV) IFM IFSM Ptot Tj Tstg
Value 85 80 100 200 1 200 150
- 55 to + 150
Unit V V mA mA A
mW OC OC
Symbol VF
IR
Max. 1.2
0.1 0.5
Unit V
µA
Total Capacitance at VR = 0 V, f = 1 MHz
CT 3 pF
Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr 4 ns
SEMTECH ELECTRONICS LTD.
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