BFS466L6

BFS466L6 NPN Silicon RF TWIN Transistor Preliminary data Low voltage/ low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: TR1: 1.1dB at 1.8 GHz TR2: 1.0 dB at 1.8 GHz World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR360L3) $ 6 4  # 6 4 " 4 5 6 1 2 3  ! ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS466L6 Maximum Ratings Parameter Marking Pin Configuration Package AC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO 4.5 6 VCES 15 15 VCBO 15 15 VEBO 1.5 2 IC 50 35 1 Sep-01-2003 Value Collector-emitter voltage TR1 TR2 Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 Unit V mA BFS466L6 Maximum Ratings Parameter Base current TR1 TR2 Total power dissipation1) TR1, TS ≤ 104°C TR2, TS ≤ 102°C Junction temperature TR1 TR2 Ambient temperature TR1 TR2 Storage temperature TR1 TR2 Thermal Resistance Parameter Junction - soldering point 2) TR1 TR2 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance Symbol IB Value 5 4 Unit mA Ptot mW 200 210 Tj °C 150 150 TA -65 ... 150 -65 ... 150 T stg -65 ... 150 -65 ... 150 Symbol RthJS ≤ 230 ≤ 230 Value Unit K/W 2 Sep-01-2003 BFS466L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Pa...