BFS480
NPN Silicon RF Transistor
4
For low noise, low-power amplifiersin mobile
5 6
communication systems (pager, c...
BFS480
NPN Silicon RF
Transistor
4
For low noise, low-power amplifiersin mobile
5 6
communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m
f T = 7 GHz
F = 1.5 dB at 900 MHz
Two (galvanic) internal isolated
2 1
C1 6 E2 5 B2 4
3
VPS05604
Transistors in one package
TR2
TR1
1 B1
2 E1
3 C2
EHA07196
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFS480
Maximum Ratings Parameter
Marking REs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 112 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance
8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ... 150
V
mA mW °C
Junction - soldering point2)
RthJS
470
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jun-27-2001
BFS480
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA I...
