DISCRETE SEMICONDUCTORS
DATA SHEET
BFT46 N-channel silicon FET
Product specification File under Discrete Semiconductors...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT46 N-channel silicon FET
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel silicon FET
DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect
transistor in a microminiature plastic envelope. The
transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. PINNING 1 = drain 2 = source 3 = gate Note : Drain and source are interchangeable. Marking code BFT46 = M3p Fig.1 Simplified outline and symbol, SOT23.
BFT46
handbook, halfpage
3 d s
g
1 Top view
2
MAM385
QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Total power dissipation up to Tamb = 40 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance (common source) ID = 0,2 mA; VDS = 10 V; f = 1 kHz Equivalent noise voltage VDS = 10 V; ID = 200 µA; B = 0,6 to 100 Hz Vn < 0,5 µV yfs > 0,5 mS IDSS > < 0,2 mA 1,5 mA ±VDS −VGSO Ptot max. max. max. 25 V 25 V 250 mW
December 1997
2
Philips Semiconductors
Product specification
N-channel silicon FET
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Gate-source voltage (open drain) Drain current Gate current Total power dissipation up to Tamb = 40 Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient(1) Note 1. Mounted on a ceramic substrate o...