B5817WS

Production specification Schottky Barrier Diode FEATURES  Extremely low VF.  Low stored change,majority carrier conduction.  Low power loss/high efficient.  MSL 1. APPLICATIONS Pb Lead-free  For Use In Low Voltage, High Frequency Inverters  Free Wheeling, And Polarity Protection Applications B5817WS SOD-323 ORDERING INFORMATION Type No. Marking B5817WS SJ Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol Non-Repetitive Peak reverse voltage VRM Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Rage VR(RMS) Io IFSM Pd RθJA TJ,TSTG Value 24 Unit V 20 V 14 1 10 235 80 -65 to +150 V A A mW ℃/W ℃ B009 Rev.A www.gmesemi.com 1 Production specification Schottky Barrier Diode B5817WS...