DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFU540 NPN SiGe wideband transistor
Product specification Supersedes data of...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFU540
NPN SiGe wideband
transistor
Product specification Supersedes data of 2002 Jan 28 2003 Jun 12
Philips Semiconductors
Product specification
NPN SiGe wideband
transistor
FEATURES Very high power gain Very low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance 45 GHz SiGe process. APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers Satellite television tuners (SATV) High frequency oscillators.
Marking code: A4. 2 Top view 1
MSB842
BFU540
PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION
handbook, halfpage
3
4
DESCRIPTION
NPN SiGe wideband
transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts ≤ 98 °C IC = 40 mA; VCE = 2 V; Tj = 25 °C IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. open emitter collector-emitter voltage open base CONDITIONS MIN. − − − − 70 − TYP. − − 40 − 140 20 0.9 MAX. 9 2.3 50 115 210 − − d...