BFV469

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D100 BFV469 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES High transition frequency Low feedback capacitance. APPLICATIONS Buffer transistor in monitors. DESCRIPTION NPN high-voltage transistor in a TO-126; SOT32 plastic package. 3 1 handbook, halfpage BFV469 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 140 100 5 100 100 100 2 +150 150 +150 V V V mA mA mA W °C °C °C UNIT 1999 Apr 26 2 Philips Semiconductors Product specification NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current ...