BFW43

BFW43 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its feature a VCEO of 150V are specified over a wide range of curent. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 C at T case ≤ 25 o C St orage Temperature Max. Operating Junction Temperature o Value -150 -150 -6 -0.1 0.4 1.4 -55 to 200 200 Unit V V V A W W o o C C 1/5 November 1997 BFW43 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 125 438 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -100 V V CE = -100 V I C = -10 µ A T a mb = 125 o C -150 Min. Typ . -0.2 -0.03 Max. -10 -10 Un it nA µA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ V BE(s at)∗ hFE∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = -2 mA -150 V I E = -10 µ A -6 V I C = -10 mA I C = -10 mA I C = -1 ...