CD483B

12 MILS 24 MILS GENERAL PURPOSE SILICON DIODES ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES EXCEPT SOLDER REFLOW MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 VRM V(pk) 80 180 250 270 80 180 250 VRWM V(pk) 70 180 225 225 70 180 225 I O I O IFSM TA=+150°C tp = 1/120 S TA=25°C mA mA A 200 50 200 50 200 50 400 150 200 50 200 50 200 50 2 2 2 5 2 2 2 TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 VF(1) V dc 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 IR1 at VRWM IR2 at VRM IR3 at VRWM TA+25°C TA+25°C TA+150°C nA dc 25 25 25 50 25 25 25 µA µA dc 100 5 100 5 100 5 50 25 100 5 100 5 100 5 CAP @VR =4V pF – – – 2.0 – – – NOTE 1 AT 100mA (pulsed) except for CD645 which is at 400mA ...