BFY180

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 BFY 180 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 180 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013 Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q97111419 (see Chapter Order Instructions for ordering example) Table 1 Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS £ 176 °C 2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2) 1) 2) Maximum Ratings Symbol Limit Values 8 15 15 2 4 0.5 1) 30 200 - 65 É + 200 - 65 É + 200 < 805 Unit V V V V mA mA mW °C °C °C K/W VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS The maximum permissible base current for VFBE measurements is 3 mA (spot-measurement duration < 1 s). TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Draft A04 1998-04-01 BFY 180 Electrical Characteristics Tabl...